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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4
BTD1383L3
Description
* The BTD1383L3 is a darlington amplifier transistor.
Symbol
BTD1383L3 B C
Outline
SOT-223
C
E
BBase CCollector EEmitter
C
E
B
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC ICP Pd RJA Tj Tstg Limits 40 32 10 0.3 1.5 (Note 1) 1.5 (Note 2) 83.3 (Note 2) 150 -55~+150 Unit V V V A A W C/W C C
Note : 1.Single pulse test, PW=10ms 2 .Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x 0.059 in : mounting pad for the collector lead min 0.93 in.
BTD1383L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCES BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 40 32 10 10K 20K Typ. 250 5 Max. 100 100 1.5 Unit V V V nA nA V
Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 2/4
Test Conditions IC=100A IC=1mA, RBE=0 IE=100A VCB=30V VEB=10V IC=200mA, IB=0.4mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
MHz pF
BTD1383L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000K Saturation Voltage---(mV) HFE@VCE=5V Current Gain---HFE 10000
Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
VCE(SAT)@IC=1000IB
100K
1000
10K 1 10 100 1000 Collector Current---IC(mA)
100 1 10 100 1000 Collector Current ---IC(mA)
On Voltage vs Collector Current
10000 VBE(ON)@VCE=5V On Voltage --- (mV) 2
Power Derating Curve
Power Dissipation---PD(W)
1.5
See Note 2 on page 1
1000
1
0.5
100 1 10 100 1000 Collector Current ---IC(mA)
0 0 50 100 150 200 Ambient Temperature ---Ta( )
BTD1383L3
CYStek Product Specification
CYStech Electronics Corp.
SOT-223 Dimension
A
Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 4/4
Marking:
B 1 2 3
C
WA
D E F G H a1 I a2
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638
Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70
DIM G H I a1 a2
Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 o *13 0o 10 o
Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 o *13 0o 10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1383L3
CYStek Product Specification

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